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dc.contributor.authorSunko, Veronika
dc.contributor.authorMilosavljević, D.
dc.contributor.authorMazzola, F.
dc.contributor.authorClark, Oliver Jon
dc.contributor.authorBurkhardt, U.
dc.contributor.authorKim, T. K.
dc.contributor.authorRosner, H.
dc.contributor.authorGrin, Yu.
dc.contributor.authorMackenzie, Andrew
dc.contributor.authorKing, Phil
dc.identifier.citationSunko , V , Milosavljević , D , Mazzola , F , Clark , O J , Burkhardt , U , Kim , T K , Rosner , H , Grin , Y , Mackenzie , A & King , P 2020 , ' Surface and bulk electronic structure of aluminium diboride ' , Physical Review. B, Condensed matter and materials physics , vol. 102 , 035143 .
dc.identifier.otherPURE: 268894140
dc.identifier.otherPURE UUID: 2aa1dfcd-50c0-42cd-9e8d-07332d7b3907
dc.identifier.otherWOS: 000550992900002
dc.identifier.otherScopus: 85089561382
dc.descriptionFunding: We acknowledge support from the European Research Council (grant no. ERC-714193 QUESTDO), the Royal Society and the Max Planck Society. V.S. and O.J.C acknowledge EPSRC for PhD studentship support through grant numbers EP/L015110/1 and EP/K503162/1, respectively. D. M. acknowledges support from the International Max Planck Research School for Chemistry and Physics of Quantum Materials (IMPRS-CPQM).en
dc.description.abstractWe report a combined experimental and theoretical study of the surface and bulk electronic structure of aluminium diboride, a non-superconducting sister compound of the superconductor MgB2. We perform angle-resolved photoemission measurements with variable photon energy, and compare them with density functional theory calculations, in order to disentangle the surface and bulk contributions to the measured spectra. Aluminium diboride is known to be aluminium deficient, Al1−δB2, which would be expected to lead to a hole doping as compared to the nominally stoichimoetric compound. Nonetheless, we find that the bulk σ states, which mediate superconductivity in MgB2, remain more than 600meV below the Fermi level. However, we also observe σ states originating from the boron terminated surface, with an order of magnitude smaller binding energy of 70meV, and demonstrate how surface hole-doping can bring these across the Fermi level.
dc.relation.ispartofPhysical Review. B, Condensed matter and materials physicsen
dc.rightsCopyright © 2020 the Author(s). Published by the American Physical Society under the terms of the Creative Commons Attribution 4.0 International license. Further distribution of this work must maintain attribution to the author(s) and the published article's title, journal citation, and DOI. Open access publication funded by the Max Planck Society.en
dc.subjectQC Physicsen
dc.subjectTK Electrical engineering. Electronics Nuclear engineeringen
dc.titleSurface and bulk electronic structure of aluminium diborideen
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews.Centre for Designer Quantum Materialsen
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews.Condensed Matter Physicsen
dc.description.statusPeer revieweden

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