The occupied electronic structure of ultrathin boron doped diamond
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Using angle-resolved photoelectron spectroscopy, we compare the electronic band structure of an ultrathin (1.8 nm) δ-layer of boron-doped diamond with a bulk-like boron doped diamond film (3 μm). Surprisingly, the measurements indicate that except for a small change in the effective mass, there is no significant difference between the electronic structure of these samples, irrespective of their physical dimensionality, except for a small modification of the effective mass. While this suggests that, at the current time, it is not possible to fabricate boron-doped diamond structures with quantum properties, it also means that nanoscale boron doped diamond structures can be fabricated which retain the classical electronic properties of bulk-doped diamond, without a need to consider the influence of quantum confinement.
Pakpour-Tabrizi , A C , Schenk , A K , Holt , A J U , Mahatha , S K , Arnold , F , Bianchi , M , Jackman , R B , Butler , J E , Vikharev , A , Miwa , J A , Hofmann , P , Cooil , S P , Wells , J W & Mazzola , F 2020 , ' The occupied electronic structure of ultrathin boron doped diamond ' , Nanoscale Advances , vol. 2 , no. 3 , pp. 1358–1364 . https://doi.org/10.1039/c9na00593e
Copyright © 2020 the Author(s). Open Access Article. This article is licensed under a Creative Commons Attribution-NonCommercial 3.0 Unported Licence.