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dc.contributor.authorAlekseev, A M
dc.contributor.authorYedrissov, A T
dc.contributor.authorIlyassov, B R
dc.contributor.authorHedley, G J
dc.contributor.authorSamuel, I D W
dc.contributor.authorKharintsev, S S
dc.identifier.citationAlekseev , A M , Yedrissov , A T , Ilyassov , B R , Hedley , G J , Samuel , I D W & Kharintsev , S S 2019 , Mapping hole mobility in PTB7 films at nanoscale . in SPM–2019–RCWDFM Joint International Conference 25–28 August 2019, Ekaterinburg, Russian Federation, Proceedings . vol. 699 , 012001 , IOP Conference Series: Materials Science and Engineering , vol. 699 , Institute of Physics Publishing , SPM-2019-RCWDFM Joint International Conference , Ekaterinburg , Russian Federation , 25/08/19 .
dc.identifier.otherPURE: 264814673
dc.identifier.otherPURE UUID: 0065bda0-130a-48c5-b0f4-ae02ab6f3d78
dc.identifier.othercrossref: 10.1088/1757-899X/699/1/012001
dc.identifier.otherScopus: 85078274227
dc.descriptionFunding: Federal Target Program of MES of Russian Federation, contract 14.575.21.0149 (RFMEFI57517X0149).en
dc.description.abstractThe nanoscale hole mobility in organic semiconducting polymer PTB7 is quantified by using conductive-AFM (C-AFM) measurements in space charge limited (SCLC) regime. The obtained current map of the neat PTB7 film is explained in terms of non-uniform built-in voltage and variations of hole mobility. For mobility estimation, the semi-empirical model of SCLC, known from previous works, was modified and applied. It is found that the values of built-in voltage in C-AFM measurements are usually several times larger than ones derived from macroscopic measurements. It is also shown that value of hole mobility in PTB7 film depends on location and varies in more than two times. These mobility variations are connected with nanoscale film structure revealed by other methods.
dc.publisherInstitute of Physics Publishing
dc.relation.ispartofSPM–2019–RCWDFM Joint International Conference 25–28 August 2019, Ekaterinburg, Russian Federation, Proceedingsen
dc.relation.ispartofseriesIOP Conference Series: Materials Science and Engineeringen
dc.rightsCopyright 2019 the Author(s). Content from this work may be used under the terms of the Creative Commons Attribution 3.0 licence. Any further distribution of this work must maintain attribution to the author(s) and the title of the work, journal citation and DOI. Published under licence by IOP Publishing Ltd.en
dc.subjectQC Physicsen
dc.subjectTK Electrical engineering. Electronics Nuclear engineeringen
dc.titleMapping hole mobility in PTB7 films at nanoscaleen
dc.typeConference itemen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Centre for Biophotonicsen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen

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