Show simple item record

Files in this item

Thumbnail

Item metadata

dc.contributor.authorSchäfer, N
dc.contributor.authorScheuermann, J
dc.contributor.authorWeih, R
dc.contributor.authorKoeth, J
dc.contributor.authorHöfling, Sven
dc.date.accessioned2019-12-18T16:30:03Z
dc.date.available2019-12-18T16:30:03Z
dc.date.issued2019-11
dc.identifier.citationSchäfer , N , Scheuermann , J , Weih , R , Koeth , J & Höfling , S 2019 , ' High efficiency mid-infrared interband cascade LEDs grown on low absorbing substrates emitting > 5 mW of output power ' , Optical Engineering , vol. 58 , no. 11 , 117106 . https://doi.org/10.1117/1.OE.58.11.117106en
dc.identifier.issn0091-3286
dc.identifier.otherPURE: 263346196
dc.identifier.otherPURE UUID: 5c94c9e9-0d79-42e9-907b-82a87d289958
dc.identifier.otherScopus: 85075971153
dc.identifier.otherWOS: 000500956500038
dc.identifier.urihttps://hdl.handle.net/10023/19162
dc.description.abstractWe present interband cascade light-emitting devices with incoherent and broadband light emission peaked at a wavelength of around 3.7  μm. The substrate-side-emitting devices display higher wall plug efficiencies and maximum output powers than any earlier mid-infrared LEDs operating in continuous wave at room temperature. To reduce absorption losses, the epitaxial structures were grown on low doped (low absorbing) GaSb substrates. The nine active stages were positioned in different configurations to investigate the impact of constructive or destructive interference when reflected from the epitaxial-side metallization of the flip-chip mounted devices. A comparison shows improved electrical properties and outcoupling efficiencies when all active stages are centered within a single antinode of the optical field. The optimized voltage efficiency combined with low optical losses lead to a maximum wall plug efficiency of 0.7%. Flip-chip mounted devices with a 640-μm squared mesa reached output powers of up to 5.1 mW at ambient temperatures with driving current (voltage) of 0.6 A (5.1 V).
dc.language.isoeng
dc.relation.ispartofOptical Engineeringen
dc.rightsCopyright © 2019 SPIE. This work has been made available online in accordance with publisher policies or with permission. Permission for further reuse of this content should be sought from the publisher or the rights holder. This is the author created accepted manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1117/1.OE.58.11.117106en
dc.subjectInterband cascade lasersen
dc.subjectMid infrared lasersen
dc.subjectLight emitting devicesen
dc.subjectAbsorption spectroscopyen
dc.subjectQuantum cascade lasersen
dc.subjectQC Physicsen
dc.subjectTK Electrical engineering. Electronics Nuclear engineeringen
dc.subjectT-NDASen
dc.subject.lccQCen
dc.subject.lccTKen
dc.titleHigh efficiency mid-infrared interband cascade LEDs grown on low absorbing substrates emitting > 5 mW of output poweren
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.identifier.doihttps://doi.org/10.1117/1.OE.58.11.117106
dc.description.statusPeer revieweden


This item appears in the following Collection(s)

Show simple item record