Evanescently coupled DBR laser arrays in the 760–770 nm wavelength range
Abstract
In this letter, we present evanescently coupled semiconductor laser arrays designed with a distributed Bragg reflector section for spectrally narrow emission and a combined waveguide section for high optical output powers. These devices were designed and fabricated in the AlGaAs material system with an InGaAsP quantum well providing emission in the 760–770 nm wavelength range. Measurements of the light-current characteristics reveal high optical output powers of 600 mW at 20 °C and 700 mW at 5 °C limited by thermal rollover without any signs of a catastrophic optical mirror damage or rapid power degradation. Spectrally narrow emission of 0.2 nm at −3 dB and a high wavelength stability with a small current tuning coefficient of 0.7 pm/mA were found. Far-field investigations reveal pre-dominant coupling of lowest order in-phase supermode emission without any sections for adjusting the phase of the electrical field vector for adjacent elements.
Citation
Reinhold , A , Fischer , M , Zeller , W , Koeth , J , Höfling , S & Kamp , M 2019 , ' Evanescently coupled DBR laser arrays in the 760–770 nm wavelength range ' , IEEE Photonics Technology Letters , vol. 31 , no. 16 , pp. 1319-1322 . https://doi.org/10.1109/LPT.2019.2925542
Publication
IEEE Photonics Technology Letters
Status
Peer reviewed
ISSN
1041-1135Type
Journal article
Rights
Copyright © 2019 IEEE. This work has been made available online in accordance with publisher policies or with permission. Permission for further reuse of this content should be sought from the publisher or the rights holder. This is the author created accepted manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1109/LPT.2019.2925542
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