On the origin of the anomalous peak in the resistivity of TiSe2
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Resistivity measurements of TiSe2 typically show only a weak change in gradient at the charge density wavetransition at TCDW ≈ 200 K, but more prominently feature a broad peak at a lower Tpeak ∼165 K, which has remained poorly understood despite decades of research on the material. Here we present quantitative simulations of the resistivity using a simplified parametrization of the normal state band structure, based on recent photoemission data. Our simulations reproduce the overall profile of the resistivity of TiSe2, including its prominent peak, without implementing the CDW at all. We find that the peak in resistivity corresponds to a crossover between a low temperature regime with electron-like carriers only, to a regime around room temperature where thermally activated and highly mobile hole-like carriers dominate the conductivity. Even when implementing substantial modifications to model the CDW below the transition temperature, we find that these thermal population effects still dominate the transport properties of TiSe2.
Watson , M D , Beales , A M & King , P D 2019 , ' On the origin of the anomalous peak in the resistivity of TiSe 2 ' , Physical Review. B, Condensed matter and materials physics , vol. 99 , no. 19 , 195142 . https://doi.org/10.1103/PhysRevB.99.195142
Physical Review. B, Condensed matter and materials physics
© 2018, American Physical Society. This work has been made available online in accordance with the publisher's policies. This is the author created accepted version manuscript following peer review and as such may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1103/PhysRevB.99.195142
DescriptionWe gratefully acknowledge support from The Leverhulme Trust (Grant No. RL-2016-006) and The Royal Society.
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