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dc.contributor.authorAndreatta, Federico
dc.contributor.authorRostami, Habib
dc.contributor.authorGrubišić Čabo, Antonija
dc.contributor.authorBianchi, Marco
dc.contributor.authorE. Sanders, Charlotte
dc.contributor.authorBiswas, Deepnarayan
dc.contributor.authorCacho, Cephise
dc.contributor.authorJ. H. Jones, Alfred
dc.contributor.authorT. Chapman, Richard
dc.contributor.authorSpringate, Emma
dc.contributor.authorKing, Phil D. C.
dc.contributor.authorMiwa, Jill A.
dc.contributor.authorBalatsky, Alexander
dc.contributor.authorUlstrup, Søren
dc.contributor.authorHofmann, Philip
dc.identifier.citationAndreatta , F , Rostami , H , Grubišić Čabo , A , Bianchi , M , E. Sanders , C , Biswas , D , Cacho , C , J. H. Jones , A , T. Chapman , R , Springate , E , King , P D C , Miwa , J A , Balatsky , A , Ulstrup , S & Hofmann , P 2019 , ' Transient hot electron dynamics in single-layer TaS 2 ' , Physical Review. B, Condensed matter and materials physics , vol. 99 , 165421 .
dc.identifier.otherPURE: 258462467
dc.identifier.otherPURE UUID: c3f2eeaf-de08-496d-b9a7-95e2263f89f2
dc.identifier.otherScopus: 85065220949
dc.identifier.otherWOS: 000464733600008
dc.descriptionAuthors gratefully acknowledge funding from VILLUM FONDEN through the Young Investigator Program (Grant No. 15375) and the Centre of Excellence for Dirac Materials (Grant No. 11744), the Danish Council for Independent Research, Natural Sciences under the Sapere Aude program (Grants No. DFF-4002-00029, No. DFF-6108-00409, and No. DFF-4090-00125), the Aarhus University Research Foundation, The Leverhulme Trust and The Royal Society.en
dc.description.abstractUsing time- and angle-resolved photoemission spectroscopy, we study the response of metallic single layer TaS2 in the 1H structural modification to the generation of excited carriers by a femtosecond laser pulse. A complex interplay of band structure modifications and electronic temperature increase is observed and analyzed by direct fits of model spectral functions to the two-dimensional (energy and k-dependent) photoemission data. Upon excitation, the partially occupied valence band is found to shift to higher binding energies by up to ≈ 100 meV, accompanied by electronic temperatures exceeding 3000~K. These observations are explained by a combination of temperature-induced shifts of the chemical potential, as well as temperature-induced changes in static screening. Both contributions are evaluated in a semi-empirical tight-binding model. The shift resulting from a change in the chemical potential is found to be dominant.
dc.relation.ispartofPhysical Review. B, Condensed matter and materials physicsen
dc.rightsCopyright © 2019, American Physical Society. This work has been made available online in accordance with the publisher's policies. This is the author created accepted version manuscript following peer review and as such may differ slightly from the final published version. The final published version of this work is available at
dc.subjectQC Physicsen
dc.titleTransient hot electron dynamics in single-layer TaS2en
dc.typeJournal articleen
dc.contributor.sponsorThe Royal Societyen
dc.contributor.sponsorThe Leverhulme Trusten
dc.contributor.sponsorThe Leverhulme Trusten
dc.contributor.institutionUniversity of St Andrews. Centre for Designer Quantum Materialsen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.description.statusPeer revieweden

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