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dc.contributor.authorCardozo de Oliveira, E. R.
dc.contributor.authorPfenning, A.
dc.contributor.authorGuarin Castro, E. D.
dc.contributor.authorTeodoro, M. D.
dc.contributor.authordos Santos, E. C.
dc.contributor.authorLopez-Richard, V.
dc.contributor.authorMarques, G. E.
dc.contributor.authorWorschech, L.
dc.contributor.authorHartmann, F.
dc.contributor.authorHöfling, S.
dc.date.accessioned2018-08-03T08:30:06Z
dc.date.available2018-08-03T08:30:06Z
dc.date.issued2018-08-15
dc.identifier.citationCardozo de Oliveira , E R , Pfenning , A , Guarin Castro , E D , Teodoro , M D , dos Santos , E C , Lopez-Richard , V , Marques , G E , Worschech , L , Hartmann , F & Höfling , S 2018 , ' Electroluminescence on-off ratio control off n−i−n GaAs/AlGaAs-based resonant tunneling structures ' , Physical Review B , vol. 98 , no. 7 , 075302 . https://doi.org/10.1103/PhysRevB.98.075302en
dc.identifier.issn2469-9950
dc.identifier.otherPURE: 255167401
dc.identifier.otherPURE UUID: 2f766ea0-55a4-4d50-aa8c-01ab6910d575
dc.identifier.othercrossref: 10.1103/PhysRevB.98.075302
dc.identifier.otherScopus: 85051476988
dc.identifier.otherWOS: 000440410800003
dc.identifier.urihttp://hdl.handle.net/10023/15756
dc.description.abstractWe explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output current changes from higher to lower values and the EL on-off ratio is enhanced by two orders of magnitude compared to the current on-off ratio. By combining the EL and the current properties, we are able to identify two independent impact ionization channels associated with the coherent resonant tunneling current and the incoherent valley current. We also perform the same investigation with an associated series resistance, which induces a bistable electrical output in the system. By simulating a resistance variation for the current voltage and the EL, we are able to tune the EL on-off ratio by up to six orders of magnitude. We further observe that the EL on and off states can be either direct or inverted compared to the tunneling current of the on and off states. This electroluminescence, combined with the unique RTD properties, such as the negative differential resistance and high-frequency operation, enables the development of high-speed functional optoelectronic devices and optical switches.
dc.format.extent6
dc.language.isoeng
dc.relation.ispartofPhysical Review Ben
dc.rights© 2018, American Physical Society. This work has been made available online in accordance with the publisher’s policies. This is the author created accepted version manuscript following peer review and as such may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1103/PhysRevB.98.075302en
dc.subjectQC Physicsen
dc.subjectTK Electrical engineering. Electronics Nuclear engineeringen
dc.subjectNDASen
dc.subject.lccQCen
dc.subject.lccTKen
dc.titleElectroluminescence on-off ratio control off n−i−n GaAs/AlGaAs-based resonant tunneling structuresen
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews.Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1103/PhysRevB.98.075302
dc.description.statusPeer revieweden


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