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dc.contributor.authorKnebl, G
dc.contributor.authorPfeffer, P
dc.contributor.authorSchmid, S
dc.contributor.authorKamp, M
dc.contributor.authorBastard, G
dc.contributor.authorBatke, E
dc.contributor.authorWorschech, L
dc.contributor.authorHartmann, F
dc.contributor.authorHöfling, Sven
dc.identifier.citationKnebl , G , Pfeffer , P , Schmid , S , Kamp , M , Bastard , G , Batke , E , Worschech , L , Hartmann , F & Höfling , S 2018 , ' Optical tuning of the charge carrier type in the topological regime of InAs/GaSb quantum wells ' , Physical Review. B, Condensed matter and materials physics , vol. 98 , no. 4 , 041301(R) .
dc.identifier.otherPURE: 253450732
dc.identifier.otherPURE UUID: fbe4874d-26e4-469a-ba1a-c51fbe15bbaa
dc.identifier.otherScopus: 85050500568
dc.identifier.otherWOS: 000438675400001
dc.descriptionThe work was supported by the DFG (project Ka2318/5-1) and the Elite Network of Bavaria within the graduate program “Topological Insulators”.en
dc.description.abstractWe study the optical tunability of the charge carrier type in InAs/GaSb double quantum wells with its type-II broken band alignment and inverted band structure. Under constant optical excitation, the majority charge carrier type switches from electron to hole. Within the majority charge carrier type transition, the coexisting minority charge carrier contribution indicates electron-hole hybridization with a non-trivial topological insulating phase. The optical tuning is attributed to the negative photoconductivity of antimonide materials in combination with a persistent charge carrier build-up of photo generated charges at the surface and substrate side of the device, respectively. Our study of the tuning of an InAs/GaSb double quantum well heterostructure reveals that an electro-optical switching is possible and paves the way to an optical control of the phase diagram of InAs/GaSb topological insulators.
dc.relation.ispartofPhysical Review. B, Condensed matter and materials physicsen
dc.rights© 2018, American Physical Society. This work has been made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at
dc.subjectQC Physicsen
dc.titleOptical tuning of the charge carrier type in the topological regime of InAs/GaSb quantum wellsen
dc.typeJournal articleen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.description.statusPeer revieweden

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