1.9 µm waveguide laser fabricated by ultrafast laser inscription in Tm:Lu2O3 ceramic
Abstract
The ultrafast laser inscription technique has been used to fabricate channel waveguides in Tm3+-doped Lu2O3 ceramic gain medium for the first time to our knowledge. Laser operation has been demonstrated using a monolithic microchip cavity with a continuous-wave Ti:sapphire pump source at 796 nm. The maximum output power achieved from the Tm:Lu2O3 waveguide laser was 81 mW at 1942 nm. A maximum slope efficiency of 9.5% was measured with the laser thresholds observed to be in the range of 50-200 mW of absorbed pump power. Propagation losses for this waveguide structure are calculated to be 0.7 dB⋅cm−1 ± 0.3 dB⋅cm−1 at the lasing wavelength.
Citation
Morris , J , Stevenson , N K , Bookey , H T , Kar , A K , Brown , C T A , Hopkins , J -M , Dawson , M D & Lagatsky , A A 2017 , ' 1.9 µm waveguide laser fabricated by ultrafast laser inscription in Tm:Lu 2 O 3 ceramic ' , Optics Express , vol. 25 , no. 13 , pp. 14910-14917 . https://doi.org/10.1364/OE.25.014910
Publication
Optics Express
Status
Peer reviewed
ISSN
1094-4087Type
Journal article
Description
Funding: UK Engineering and Physical Sciences Research Council (EPSRC) (EP/G037523/1, EP/L01596X/1).Collections
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