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dc.contributor.authorJiang, Jun
dc.contributor.authorLong Bai, Zi
dc.contributor.authorChen, Zhi Hui
dc.contributor.authorHe, Long
dc.contributor.authorWei Zhang, David
dc.contributor.authorHua Zhang, Qing
dc.contributor.authorAn Shi, Jin
dc.contributor.authorHyuk Park, Min
dc.contributor.authorScott, James Floyd
dc.contributor.authorSeong Hwang, Cheol
dc.contributor.authorQuan Jiang, An
dc.date.accessioned2018-05-20T23:33:06Z
dc.date.available2018-05-20T23:33:06Z
dc.date.issued2018-01
dc.identifier.citationJiang , J , Long Bai , Z , Chen , Z H , He , L , Wei Zhang , D , Hua Zhang , Q , An Shi , J , Hyuk Park , M , Scott , J F , Seong Hwang , C & Quan Jiang , A 2018 , ' Temporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memories ' , Nature Materials , vol. 17 , no. 1 , pp. 49-56 . https://doi.org/10.1038/nmat5028en
dc.identifier.issn1476-1122
dc.identifier.otherPURE: 251331484
dc.identifier.otherPURE UUID: 6b10a8b9-c5ea-4af0-9ca1-b538a8b45bff
dc.identifier.otherScopus: 85038573898
dc.identifier.otherWOS: 000422790000015
dc.identifier.urihttps://hdl.handle.net/10023/13404
dc.descriptionFunding: Strategic Priority Research Program of the Chinese Academy of Sciences (grant number XDB07030200) (JFS).en
dc.description.abstractErasable conductive domain walls in insulating ferroelectric thin films can be used for non-destructive electrical read-out of the polarization states in ferroelectric memories. Still, the domain-wall currents extracted by these devices have not yet reached the intensity and stability required to drive read-out circuits operating at high speeds. This study demonstrated non-destructive read-out of digital data stored using specific domain-wall configurations in epitaxial BiFeO3 thin films formed in mesa-geometry structures. Partially switched domains, which enable the formation of conductive walls during the read operation, spontaneously retract when the read voltage is removed, reducing the accumulation of mobile defects at the domain walls and potentially improving the device stability. Three-terminal memory devices produced 14 nA read currents at an operating voltage of 5 V, and operated up to T = 85 °C. The gap length can also be smaller than the film thickness, allowing the realization of ferroelectric memories with device dimensions far below 100 nm.
dc.format.extent8
dc.language.isoeng
dc.relation.ispartofNature Materialsen
dc.rights© 2017, Macmillan Publishers Ltd. This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1038/nmat5028en
dc.rights© 2017, Macmillan Publishers Ltd. This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1038/nmat5028en
dc.subjectQC Physicsen
dc.subjectT Technologyen
dc.subjectNDASen
dc.subjectBDCen
dc.subjectR2Cen
dc.subject.lccQCen
dc.subject.lccTen
dc.titleTemporary formation of highly conducting domain walls for non-destructive read-out of ferroelectric domain-wall resistance switching memoriesen
dc.typeJournal articleen
dc.description.versionPostprinten
dc.description.versionPostprinten
dc.contributor.institutionUniversity of St Andrews. School of Chemistryen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1038/nmat5028
dc.description.statusPeer revieweden
dc.date.embargoedUntil2018-05-20


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