Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications
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We present resonant tunneling diode-photodetectors (RTD-PDs) with GaAs0.15Sb0.85/AlAs0.1Sb0.9 double barrier structures combined with an additional quaternary Ga0.64In0.36As0.33Sb0.67 absorption layer covering the fingerprint absorption lines of various gases in the mid-infrared wavelength spectral region. The absorption layer cut-off wavelength is determined to be 3.5 µm and the RTD-PDs show peak-to-valley current ratios up to 4.3 with peak current densities of 12 A/cm-2.The incorporation of the quaternary absorption layer enables the RTD-PD to be sensitive to illumination with light up to the absorption lines of HCl at 3395 nm. At this wavelength, the detector shows a responsivity of 6.3 mA/W. At the absorption lines of CO2 and CO at 2004 nm and 2330 nm respectively, the RTD-PD reaches responsivities up to 0.97 A/W. Thus RTD-PDs pave the way towards high sensitive mid-infrared detectors that can be utilized in tunable laser absorption spectroscopy.
Rothmayr , F , Pfenning , A , Kistner , C , Koeth , J , Knebl , G , Schade , A , Krueger , S , Worschech , L , Hartmann , F & Höfling , S 2018 , ' Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications ' , Applied Physics Letters , vol. 112 , no. 16 , 161107 . https://doi.org/10.1063/1.5025531
Applied Physics Letters
© 2018, the Author(s). This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at https://doi.org/10.1063/1.5025531
DescriptionThe authors are grateful for financial support by the BMBF via the national project HIRT (FKZ:13XP5003A).
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