Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications
Abstract
We present resonant tunneling diode-photodetectors (RTD-PDs) with GaAs0.15Sb0.85/AlAs0.1Sb0.9 double barrier structures combined with an additional quaternary Ga0.64In0.36As0.33Sb0.67 absorption layer covering the fingerprint absorption lines of various gases in the mid-infrared wavelength spectral region. The absorption layer cut-off wavelength is determined to be 3.5 µm and the RTD-PDs show peak-to-valley current ratios up to 4.3 with peak current densities of 12 A/cm-2.The incorporation of the quaternary absorption layer enables the RTD-PD to be sensitive to illumination with light up to the absorption lines of HCl at 3395 nm. At this wavelength, the detector shows a responsivity of 6.3 mA/W. At the absorption lines of CO2 and CO at 2004 nm and 2330 nm respectively, the RTD-PD reaches responsivities up to 0.97 A/W. Thus RTD-PDs pave the way towards high sensitive mid-infrared detectors that can be utilized in tunable laser absorption spectroscopy.
Citation
Rothmayr , F , Pfenning , A , Kistner , C , Koeth , J , Knebl , G , Schade , A , Krueger , S , Worschech , L , Hartmann , F & Höfling , S 2018 , ' Mid-infrared GaSb-based resonant tunneling diode photodetectors for gas sensing applications ' , Applied Physics Letters , vol. 112 , no. 16 , 161107 . https://doi.org/10.1063/1.5025531
Publication
Applied Physics Letters
Status
Peer reviewed
ISSN
0003-6951Type
Journal article
Description
The authors are grateful for financial support by the BMBF via the national project HIRT (FKZ:13XP5003A).Collections
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