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dc.contributor.authorKhurana, Geetika
dc.contributor.authorKumar, Nitu
dc.contributor.authorScott, James Floyd
dc.contributor.authorKatiyar, Ram S.
dc.contributor.editorJames, Alex Pappachen
dc.date.accessioned2018-04-05T16:30:23Z
dc.date.available2018-04-05T16:30:23Z
dc.date.issued2018-04-04
dc.identifier.citationKhurana , G , Kumar , N , Scott , J F & Katiyar , R S 2018 , Graphene oxide based memristor . in A P James (ed.) , Memristor and Memristive Neural Networks . InTech , pp. 19-40 . https://doi.org/10.5772/intechopen.69752en
dc.identifier.isbn9789535139478
dc.identifier.isbn9789535154815
dc.identifier.otherPURE: 250005483
dc.identifier.otherPURE UUID: 6ebf1219-fc8f-4290-94d4-643a6aa7a84f
dc.identifier.urihttps://hdl.handle.net/10023/13080
dc.descriptionThe authors acknowledge the financial support from DOD Grant (AFOSR‐FA9550‐16‐1‐0295) and IFN‐NSF Grant (EPS‐01002410) for travel support.en
dc.description.abstractA memristor is the memory extension to the concept of resistor. With unique superior properties, memristors have prospective promising applications in non‐volatile memory (NVM). Resistive random access memory (RRAM) is a non‐volatile memory using a material whose resistance changes under electrical stimulus can be seen as the most promising candidate for next generation memory both as embedded memory and a stand‐alone memory due to its high speed, long retention time, low power consumption, scalability and simple structure. Among carbon‐based materials, graphene has emerged as wonder material with remarkable properties. In contrast to metallic nature of graphene, the graphene oxide (GO) is good insulating/semiconducting material and suitable for RRAM devices. The advantage of being atomically thin and the two-dimensional of GO permits scaling beyond the current limits of semiconductor technology, which is a key aspect for high‐density fabrication. Graphene oxide‐based resistive memory devices have several advantages over other oxide materials, such as easy synthesis and cost‐effective device fabrication, scaling down to few nanometre and compatibility for flexible device applications. In this chapter, we discuss the GO‐based RRAM devices, which have shown the properties of forming free, thermally stable, multi‐bit storage, flexible and high on/off ratio at low voltage, which boost up the research and development to accelerate the GO‐based RRAM devices for future memory applications.
dc.language.isoeng
dc.publisherInTech
dc.relation.ispartofMemristor and Memristive Neural Networksen
dc.rights© 2018 The Author(s). Licensee InTech. This chapter is distributed under the terms of the Creative CommonsAttribution License (http://creativecommons.org/licenses/by/3.0), which permits unrestricted use,distribution, and reproduction in any medium, provided the original work is properly cited.en
dc.subjectMemristoren
dc.subjectGraphene oxideen
dc.subjectForming freeen
dc.subjectMulti-bit storageen
dc.subjectFlexible devicesen
dc.subjectQC Physicsen
dc.subjectTK Electrical engineering. Electronics Nuclear engineeringen
dc.subject.lccQCen
dc.subject.lccTKen
dc.titleGraphene oxide based memristoren
dc.typeBook itemen
dc.description.versionPublisher PDFen
dc.contributor.institutionUniversity of St Andrews. School of Chemistryen
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.5772/intechopen.69752


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