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Zero-gap semiconductor to excitonic insulator transition in Ta2NiSe5
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dc.contributor.author | Lu, Y. F. | |
dc.contributor.author | Kono, H. | |
dc.contributor.author | Larkin, T. I. | |
dc.contributor.author | Rost, A. W. | |
dc.contributor.author | Takayama, T. | |
dc.contributor.author | Boris, A. V. | |
dc.contributor.author | Keimer, B. | |
dc.contributor.author | Takagi, H. | |
dc.date.accessioned | 2017-12-19T15:30:07Z | |
dc.date.available | 2017-12-19T15:30:07Z | |
dc.date.issued | 2017-02-16 | |
dc.identifier | 251803111 | |
dc.identifier | 59763ca0-8bc5-4de4-a141-36d0947f1a80 | |
dc.identifier | 000394225500001 | |
dc.identifier | 85013150846 | |
dc.identifier.citation | Lu , Y F , Kono , H , Larkin , T I , Rost , A W , Takayama , T , Boris , A V , Keimer , B & Takagi , H 2017 , ' Zero-gap semiconductor to excitonic insulator transition in Ta 2 NiSe 5 ' , Nature Communications , vol. 8 , 14408 . https://doi.org/10.1038/ncomms14408 | en |
dc.identifier.issn | 2041-1723 | |
dc.identifier.uri | https://hdl.handle.net/10023/12357 | |
dc.description | This work was partially supported by Grant-in-Aid for Scientific Research (S; grant no. 24224010) and by Grant-in-Aid for Scientific Research on Innovative Areas (grant no. JP15H05852). H.T. acknowledges support from the Alexander von Humboldt foundation. | en |
dc.description.abstract | The excitonic insulator is a long conjectured correlated electron phase of narrow-gap semiconductors and semimetals, driven by weakly screened electron–hole interactions. Having been proposed more than 50 years ago, conclusive experimental evidence for its existence remains elusive. Ta2NiSe5 is a narrow-gap semiconductor with a small one-electron bandgap EG of <50 meV. Below TC=326 K, a putative excitonic insulator is stabilized. Here we report an optical excitation gap Eop ∼0.16 eV below TC comparable to the estimated exciton binding energy EB. Specific heat measurements show the entropy associated with the transition being consistent with a primarily electronic origin. To further explore this physics, we map the TC–EG phase diagram tuning EG via chemical and physical pressure. The dome-like behaviour around EG∼0 combined with our transport, thermodynamic and optical results are fully consistent with an excitonic insulator phase in Ta2NiSe5. | |
dc.format.extent | 7 | |
dc.format.extent | 731429 | |
dc.language.iso | eng | |
dc.relation.ispartof | Nature Communications | en |
dc.subject | QC Physics | en |
dc.subject | NDAS | en |
dc.subject | BDC | en |
dc.subject | R2C | en |
dc.subject.lcc | QC | en |
dc.title | Zero-gap semiconductor to excitonic insulator transition in Ta2NiSe5 | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.identifier.doi | 10.1038/ncomms14408 | |
dc.description.status | Peer reviewed | en |
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