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Sensitivity of resonant tunneling diode photodetectors
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dc.contributor.author | Pfenning, Andreas | |
dc.contributor.author | Hartmann, Fabian | |
dc.contributor.author | Langer, Fabian | |
dc.contributor.author | Kamp, Martin | |
dc.contributor.author | Hoefling, Sven | |
dc.contributor.author | Worschech, Lukas | |
dc.date.accessioned | 2017-07-25T23:33:54Z | |
dc.date.available | 2017-07-25T23:33:54Z | |
dc.date.issued | 2016-09-02 | |
dc.identifier | 243606416 | |
dc.identifier | 889692ad-04f2-450b-b623-a1a66a5ff56a | |
dc.identifier | 84984813346 | |
dc.identifier | 000383964000005 | |
dc.identifier.citation | Pfenning , A , Hartmann , F , Langer , F , Kamp , M , Hoefling , S & Worschech , L 2016 , ' Sensitivity of resonant tunneling diode photodetectors ' , Nanotechnology , vol. 27 , no. 35 , 355202 . https://doi.org/10.1088/0957-4484/27/35/355202 | en |
dc.identifier.issn | 0957-4484 | |
dc.identifier.uri | https://hdl.handle.net/10023/11283 | |
dc.description | The authors are grateful for financial support by the BMBF via national project EIPHRIK (FKZ: 13N10710) and the European Union (FPVII (2007-2013) under Grant Agreement No. 318287 LANDAUER). | en |
dc.description.abstract | We have studied the sensitivity of AlGaAs/GaAs double barrier resonant tunneling diode photodetectors with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of λ=1.3 µm for illumination powers from pico to micro Watts. The sensitivity decreases nonlinearly with power. An illumination power increase of seven orders of magnitude leads to a reduction of the photocurrent sensitivity from SI =5.82 × 103 A/W to 3.2 A/W. We attribute the nonlinear sensitivity-power dependence to an altered local electrostatic potential due to hole-accumulation that on the one hand tunes the tunneling current, but on the other hand affects the lifetime of photogenerated holes. In particular, the lifetime decreases exponentially with increasing hole-population. The lifetime reduction results from an enhanced electrical field, a rise of the quasi-Fermi level and an increased energy splitting within the triangular potential well. The non-constant sensitivity is a direct result of the non-constant lifetime. Based on these findings, we provide an expression that allows to calculate the sensitivity as a function of illumination power and bias voltage, show a way to model the time-resolved photocurrent, and determine the critical power up to which the resonant tunneling diode photosensor sensitivity can be assumed constant. | |
dc.format.extent | 9 | |
dc.format.extent | 823268 | |
dc.language.iso | eng | |
dc.relation.ispartof | Nanotechnology | en |
dc.subject | Resonant tunneling diode | en |
dc.subject | Photodetector | en |
dc.subject | RTD | en |
dc.subject | AIGaAs/GaAs | en |
dc.subject | GaInNAs | en |
dc.subject | Sensitivity | en |
dc.subject | QC Physics | en |
dc.subject | T Technology | en |
dc.subject | NDAS | en |
dc.subject.lcc | QC | en |
dc.subject.lcc | T | en |
dc.title | Sensitivity of resonant tunneling diode photodetectors | en |
dc.type | Journal article | en |
dc.contributor.institution | University of St Andrews. School of Physics and Astronomy | en |
dc.contributor.institution | University of St Andrews. Condensed Matter Physics | en |
dc.identifier.doi | 10.1088/0957-4484/27/35/355202 | |
dc.description.status | Peer reviewed | en |
dc.date.embargoedUntil | 2017-07-25 |
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