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dc.contributor.authorUlstrup, Søren
dc.contributor.authorGrubišić Čabo, Antonija
dc.contributor.authorMiwa, Jill A
dc.contributor.authorRiley, Jonathon Mark
dc.contributor.authorGrønborg, Signe S
dc.contributor.authorJohannsen, Jens C
dc.contributor.authorCacho, Cephise
dc.contributor.authorAlexander, Oliver
dc.contributor.authorChapman, Richard T
dc.contributor.authorSpringate, Emma
dc.contributor.authorBianchi, Mario
dc.contributor.authorDendzik, Maciej
dc.contributor.authorLauritsen, Jeppe V
dc.contributor.authorKing, Philip David
dc.contributor.authorHofmann, Philip
dc.date.accessioned2017-06-06T23:34:06Z
dc.date.available2017-06-06T23:34:06Z
dc.date.issued2016-06-28
dc.identifier.citationUlstrup , S , Grubišić Čabo , A , Miwa , J A , Riley , J M , Grønborg , S S , Johannsen , J C , Cacho , C , Alexander , O , Chapman , R T , Springate , E , Bianchi , M , Dendzik , M , Lauritsen , J V , King , P D & Hofmann , P 2016 , ' Ultrafast band structure control of a two-dimensional heterostructure ' ACS Nano , vol 10 , no. 6 , pp. 6315-6322 . DOI: 10.1021/acsnano.6b02622en
dc.identifier.issn1936-0851
dc.identifier.otherPURE: 243285385
dc.identifier.otherPURE UUID: 82449645-1bab-4527-a1e2-6a5a8d05f245
dc.identifier.otherScopus: 84976524970
dc.identifier.urihttp://hdl.handle.net/10023/10914
dc.description.abstractThe electronic structure of two-dimensional (2D) semiconductors can be signicantly altered by screening effects, either from free charge carriers in the material itself, or by environmental screening from the surrounding medium. The physical properties of 2D semiconductors placed in a heterostructure with other 2D materials are therefore governed by a complex interplay of both intra- and inter-layer interactions. Here, using time- and angle-resolved photoemission, we are able to isolate both the layer-resolved band structure and, more importantly, the transient band structure evolution of a model 2D heterostructure formed of a single layer of MoS 2 on graphene. Our results reveal a pronounced renormalization of the quasiparticle gap of the MoS 2 layer. Following optical excitation, the band gap is reduced by up to ∼400 meV on femtosecond timescales due to a persistence of strong electronic interactions despite the environmental screening by the n-doped graphene. This points to a large degree of tuneability of both the electronic structure and electron dynamics for 2D semiconductors embedded in a van der Waals-bonded heterostructure.en
dc.language.isoeng
dc.relation.ispartofACS Nanoen
dc.rights© 2016, American Chemical Society. This work is made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at pubs.acs.org / https://dx.doi.org/10.1021/acsnano.6b02622en
dc.subjectUltrafast time- and angle-resolved photoemissionen
dc.subjectBand gap renormalizationen
dc.subject2D material heterostructuresen
dc.subjectGrapheneen
dc.subjectTransition metal dichalcogenidesen
dc.subjectQC Physicsen
dc.subjectTK Electrical engineering. Electronics Nuclear engineeringen
dc.subjectDASen
dc.subject.lccQCen
dc.subject.lccTKen
dc.titleUltrafast band structure control of a two-dimensional heterostructureen
dc.typeJournal articleen
dc.description.versionPostprinten
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doihttp://dx.doi.org/10.1021/acsnano.6b02622
dc.description.statusPeer revieweden
dc.date.embargoedUntil06-06-20


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