Probing the carrier transfer processes in a self-assembled system with In0.3Ga0.7As/GaAs quantum dots by photoluminescence excitation spectroscopy
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In this report we present experimental studies on the energy transfer between the wetting layer and single large elongated In0.3Ga0.7As/GaAs quantum dots. We obtain insight into the electronic and optical properties of In0.3Ga0.7As/GaAs quantum dots by probing their confined electronic states via photoluminescence excitation spectroscopy on the single dot level. We demonstrate that the energy separation between the states of a quantum dot and the wetting layer states affects the carrier transfer efficiency - reduced transfer efficiency is observed for smaller dots with higher indium content. We also discuss the effects of the excited states and the trapping of carriers on confinement potential fluctuations of the wetting layer. Eventually, the transfer of charge carriers from localized wetting layer states to a single quantum dot is evidenced in temperature-dependent photoluminescence excitation spectroscopy.
Podemski , P , Pieczarka , M , Maryński , A , Misiewicz , J , Löffler , A , Höfling , S , Reithmaier , J P , Reitzenstein , S & Sęk , G 2016 , ' Probing the carrier transfer processes in a self-assembled system with In 0.3 Ga 0.7 As/GaAs quantum dots by photoluminescence excitation spectroscopy ' Superlattices and Microstructures , vol 93 , pp. 214-220 . DOI: 10.1016/j.spmi.2016.03.023
Superlattices and Microstructures
© 2016, Publisher / the Author(s). This work is made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at www.sciencedirect.com / https://dx.doi.org/10.1016/j.spmi.2016.03.023
We acknowledge financial support from the Polish Ministry of Science and Higher Education within the “Diamond Grant” project No. DI2012 008642 and by the State of Bavaria.
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