Ferroelectric photovoltaic properties in doubly substituted (Bi0.9La0.1)(Fe0.97Ta0.03)O3 thin films
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Doubly substituted [Bi0.9La0.1][Fe0.97Ta0.03]O3 (BLFTO) films were fabricated on Pt/TiO2/SiO2/Si substrates by pulsed laser deposition. The ferroelectric photovoltaic properties of ZnO:Al/BLFTO/Pt thin film capacitor structures were evaluated under white light illumination. The open circuit voltage and short circuit current density were observed to be ∼0.20 V and ∼1.35 mA/cm2, respectively. The band gap of the films was determined to be ∼2.66 eV, slightly less than that of pure BiFeO3 (2.67 eV). The PVproperties of BLFTO thin films were also studied for various pairs of planar electrodes in different directions in polycrystalline thin films.
Katiyar , R K , Sharma , Y , Barrionuevo , D , Kooriyattil , S , Pavunny , S P , Young , J S , Morell , G , Weiner , B R , Katiyar , R S & Scott , J F 2015 , ' Ferroelectric photovoltaic properties in doubly substituted (Bi 0.9 La 0.1 )(Fe 0.97 Ta 0.03 )O 3 thin films ' Applied Physics Letters , vol 106 , no. 8 , 082903 . DOI: 10.1063/1.4908254
Applied Physics Letters
© 2015 AIP Publishing LLC. This work is made available online in accordance with the publisher’s policies. This is the final published version of the work, which was originally published at: https://dx.doi.org/10.1063/1.4908254.
This work was supported by the DOE-EPSCoR Grant No. DE-FG02-08ER46526. Acknowledgment is also due to NSF Grant No. #1002410 for providing fellowships to R.K.K., D.B., and J.S.Y.
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