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dc.contributor.authorMaier, P.
dc.contributor.authorHartmann, F.
dc.contributor.authorEmmerling, M.
dc.contributor.authorSchneider, C.
dc.contributor.authorKamp, M.
dc.contributor.authorWorschech, L.
dc.contributor.authorHöfling, S.
dc.date.accessioned2017-02-06T15:30:16Z
dc.date.available2017-02-06T15:30:16Z
dc.date.issued2017-02-03
dc.identifier.citationMaier , P , Hartmann , F , Emmerling , M , Schneider , C , Kamp , M , Worschech , L & Höfling , S 2017 , ' Associative learning with Y-shaped floating gate transistors operated in memristive modes ' , Applied Physics Letters , vol. 110 , no. 5 , 053503 . https://doi.org/10.1063/1.4975370en
dc.identifier.issn0003-6951
dc.identifier.otherPURE: 249089125
dc.identifier.otherPURE UUID: 8aa8ba0b-91cd-400b-9f11-2e0c472298ae
dc.identifier.otherBibtex: urn:ce3a9231e7b7cb7c29867b7ebad07b3d
dc.identifier.otherScopus: 85011695276
dc.identifier.otherWOS: 000394057600043
dc.identifier.urihttps://hdl.handle.net/10023/10238
dc.descriptionThe authors gratefully acknowledge financial support from the European Union (FPVII (2007-2013) under grant agreement n° 318287 Landauer) as well as the state of Bavaria.en
dc.description.abstractWe present Y-shaped three-terminal floating gate transistors with positioned quantum dots (QDs) acting as floating gates. The QDs are precisely positioned in the input terminals and the localized charge controls the conductance of the transistors. Connecting two devices enables to implement associative learning by tuning the QD-charge with two input signals. The number of pulses to develop or to forget the association depends on the widths and amplitudes of the applied voltage pulses. The Y-shaped geometry of the presented device may be considered to implement synaptic functionalities without separating learning and signal transmission in time.
dc.format.extent4
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.rights© 2017, the Author(s). This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at aip.scitation.org / https://doi.org/10.1063/1.4975370en
dc.subjectQC Physicsen
dc.subjectT Technologyen
dc.subjectNDASen
dc.subject.lccQCen
dc.subject.lccTen
dc.titleAssociative learning with Y-shaped floating gate transistors operated in memristive modesen
dc.typeJournal articleen
dc.description.versionPostprinten
dc.contributor.institutionUniversity of St Andrews. School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews. Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1063/1.4975370
dc.description.statusPeer revieweden


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