Optimizing the active region of interband cascade lasers for passive mode-locking
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The work proposes possible designs of active regions for a mode-locked interband cascade laser emitting in the mid infrared. For that purpose we investigated the electronic structure properties of respectively modified GaSb-based type II W-shaped quantum wells, including the effect of external bias in order to simultaneously fulfil the requirements for both the absorber as well as the gain sections of a device. The results show that introducing multiple InAs layers in type II InAs/GaInSb quantum wells or introducing a tensely-strained GaAsSb layer into “W-shaped” type II QWs offers significant difference in optical transitions’ oscillator strengths (characteristic lifetimes) of the two oppositely polarized parts of such a laser, being promising for utilization in mode-locked devices.
Ryczko , K , Misiewicz , J , Höfling , S , Kamp , M & Sęk , G 2017 , ' Optimizing the active region of interband cascade lasers for passive mode-locking ' AIP Advances , vol 7 , no. 1 , 015015 . DOI: 10.1063/1.4973937
© 2017 Author(s). Open Access article All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
This project has received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 636930 (iCspec).
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