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dc.contributor.authorPfenning, Andreas
dc.contributor.authorKnebl, Georg
dc.contributor.authorHartmann, Fabian
dc.contributor.authorWeih, Robert
dc.contributor.authorBader, Andreas
dc.contributor.authorEmmerling, Monika
dc.contributor.authorKamp, Martin
dc.contributor.authorHöfling, Sven
dc.contributor.authorWorschech, Lukas
dc.date.accessioned2017-01-05T15:30:15Z
dc.date.available2017-01-05T15:30:15Z
dc.date.issued2017-01-20
dc.identifier.citationPfenning , A , Knebl , G , Hartmann , F , Weih , R , Bader , A , Emmerling , M , Kamp , M , Höfling , S & Worschech , L 2017 , ' Room temperature operation of GaSb-based resonant tunneling diodes by prewell injection ' , Applied Physics Letters , vol. 110 , no. 3 , 033507 . https://doi.org/10.1063/1.4973894en
dc.identifier.issn0003-6951
dc.identifier.otherPURE: 248664414
dc.identifier.otherPURE UUID: 1c672f69-cbcf-4e26-b65f-14fbab6d7545
dc.identifier.otherScopus: 85010434644
dc.identifier.otherWOS: 000392836900045
dc.identifier.urihttp://hdl.handle.net/10023/10050
dc.descriptionThe authors are grateful for financial support by the state of Bavaria, the German Ministry of Education and Research (BMBF) within the national project HIRT (FKZ 13XP5003B).en
dc.description.abstractWe present room temperature resonant tunneling of GaSb/AlAsSb double barrier resonant tunneling diodes with pseudomorphically grown prewell emitter structures comprising the ternary compound semiconductors GaInSb and GaAsSb. At room temperature, resonant tunneling is absent for diode structures without prewell emitters. The incorporation of Ga0.84In0.16Sb and GaAs0.05Sb0.95 prewell emitters leads to room temperature resonant tunneling with peak‐to‐valley current ratios of 1.45 and 1.36 , respectively. The room temperature operation is attributed to the enhanced Γ ‐L‐valley energy separation and consequently depopulation of L‐valley states in the conduction band of the ternary compound emitter prewell with respect to bulk GaSb.
dc.format.extent5
dc.language.isoeng
dc.relation.ispartofApplied Physics Lettersen
dc.rights© 2017 the Author(s). This work has been made available online in accordance with the publisher’s policies. This is the author created, accepted version manuscript following peer review and may differ slightly from the final published version. The final published version of this work is available at apl.aip.scitation / https://dx.doi.org/10.1063/1.4973894en
dc.subjectQC Physicsen
dc.subjectT Technologyen
dc.subjectNDASen
dc.subject.lccQCen
dc.subject.lccTen
dc.titleRoom temperature operation of GaSb-based resonant tunneling diodes by prewell injectionen
dc.typeJournal articleen
dc.description.versionPostprinten
dc.contributor.institutionUniversity of St Andrews.School of Physics and Astronomyen
dc.contributor.institutionUniversity of St Andrews.Condensed Matter Physicsen
dc.identifier.doihttps://doi.org/10.1063/1.4973894
dc.description.statusPeer revieweden


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