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dc.contributor.advisorO'Faolain, Liam
dc.contributor.authorLiles, Alexandros Athanasios
dc.coverage.spatialxii, 150 p.en_US
dc.date.accessioned2017-11-14T10:55:35Z
dc.date.available2017-11-14T10:55:35Z
dc.date.issued2017-12-07
dc.identifier.urihttp://hdl.handle.net/10023/12081
dc.description.abstractIn recent years, Silicon Photonics has emerged as a promising technology for cost-effective fabrication of photonic components and integrated circuits, the application of which is recently expanding in technological fields beyond tele- and data-communications, such as sensing and biophotonics. Compact, energy-efficient laser sources with precise wavelength control are crucial for the aforementioned applications. However, practical, efficient, electrically-pumped lasers on Silicon or other group IV elements are still absent, owing to the indirect bandgap of those materials. Consequently, the integration of III-V compounds on Silicon currently appears to be the most viable route to the realization of such lasers. In this thesis, I present and explore the potential of an External Cavity (EC) hybrid III-V/Silicon laser design, comprising a III-V-based Reflective Semiconductor Optical Amplifier (RSOA) and a Silicon reflector chip, based on a two-dimensional Photonic Crystal (PhC) cavity vertically coupled to a low-refractive-index dielectric waveguide. The vertically coupled system functions as a wavelength-selective reflector, determining the lasing wavelength. Based on this architecture mW-level continuous-wave (CW) lasing at room temperature was shown both in a fiber-based long cavity scheme and die-based short cavity scheme, with SMSR of > 25 dB and > 40 dB, respectively. Furthermore, by electrically modulating the refractive index of the PhC cavity in the reflector chip, tuning of the emitted wavelength was achieved in the die-based short cavity EC laser configuration. In this way, I demonstrated the suitability of the examined EC configuration for direct frequency modulation. The proposed scheme eliminates the need for wavelength matching between the laser source and a resonant modulator, and reveals the potential of employing low-power-consumption resonant modulation in practical Silicon Photonics applications.en_US
dc.language.isoenen_US
dc.publisherUniversity of St Andrews
dc.rightsAttribution-NonCommercial-ShareAlike 4.0 International*
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/*
dc.subjectPhotonic crystal cavitiesen_US
dc.subjectSilicon photonicsen_US
dc.subjectHybrid III-V/silicon lasersen_US
dc.subject.lccTA1677.L56
dc.subject.lcshPhotonic crystalsen
dc.subject.lcshSilicon--Optical propertiesen
dc.subject.lcshLasersen
dc.titleHybrid photonic crystal cavity based lasersen_US
dc.typeThesisen_US
dc.contributor.sponsorEngineering and Physical Sciences Research Council (EPSRC)en_US
dc.contributor.sponsorEuropean Research Council (ERC)en_US
dc.type.qualificationlevelDoctoralen_US
dc.type.qualificationnamePhD Doctor of Philosophyen_US
dc.publisher.institutionThe University of St Andrewsen_US


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