Charging dynamics of a floating gate transistor with site-controlled quantum dots
Abstract
A quantum dot memory based on a GaAs/AlGaAs quantum wire with site-controlled InAs quantum dots was realized by means of molecular beam epitaxy and etching techniques. By sampling of different gate voltage sweeps for the determination of charging and discharging thresholds, it was found that discharging takes place at short time scales of μs, whereas several seconds of waiting times within a distinct negative gate voltage range were needed to charge the quantum dots. Such quantum dot structures have thus the potential to implement logic functions comprising charge and time dependent ingredients such as counting of signals or learning rules.
Citation
Maier , P , Hartmann , F , Emmerling , M , Schneider , C , Höfling , S , Kamp , M & Worschech , L 2014 , ' Charging dynamics of a floating gate transistor with site-controlled quantum dots ' , Applied Physics Letters , vol. 105 , no. 5 , 053502 . https://doi.org/10.1063/1.4892355
Publication
Applied Physics Letters
Status
Peer reviewed
ISSN
0003-6951Type
Journal article
Rights
© 2014 AIP Publishing LLC
Description
The authors gratefully acknowledge financial support from the European Union (FPVII (2007–2013) under Grant Agreement No. 318287 Landauer) as well as the state of Bavaria.Collections
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