Now showing items 1-3 of 3

  • Cavity-enhanced resonant tunneling photodetector at telecommunication wavelengths 

    Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Hoefling, Sven; Kamp, Martin; Worschech, Lukas (2014-03-10) - Journal article
    An AlGaAs/GaAs double barrier resonant tunneling diode (RTD) with a nearby lattice-matched GaInNAs absorption layer was integrated into an optical cavity consisting of five and seven GaAs/AlAs layers to demonstrate cavity ...
  • Sensitivity of resonant tunneling diode photodetectors 

    Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Kamp, Martin; Hoefling, Sven; Worschech, Lukas (2016-09-02) - Journal article
    We have studied the sensitivity of AlGaAs/GaAs double barrier resonant tunneling diode photodetectors with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of λ=1.3 µm for ...
  • Spin relaxation and carrier recombination in GaInNAs multiple quantum wells 

    Reith, Charis (University of St Andrews, 2007-06) - Thesis
    Electron spin relaxation and carrier recombination were investigated in gallium indium nitride arsenide (GaInNAs) multiple quantum wells, using picosecond optical pulses. Pump-probe experiments were carried out at room ...