Site-controlled InAs/GaAs quantum dots emitting at telecommunication wavelength
Abstract
We demonstrate site-controlled InAs/GaAs quantum dot (QD) emission at 1.3 mu m telecommunication wavelength. The samples were fabricated by molecular beam epitaxy on patterned substrates, which have been prepared by electron beam lithography and wet chemical etching. By embedding a single layer of positioned QDs in a strain reducing InGaAs quantum well layer, we successfully shifted the emission band beyond the important telecommunication wavelength of 1.3 mu m. Furthermore, the resulting deep carrier confinement allowed us to preserve strong QD luminescence up to room temperature.
Citation
Maier , S , Berschneider , K , Steinl , T , Forchel , A , Hoefling , S , Schneider , C & Kamp , M 2014 , ' Site-controlled InAs/GaAs quantum dots emitting at telecommunication wavelength ' , Semiconductor Science and Technology , vol. 29 , no. 5 , 052001 . https://doi.org/10.1088/0268-1242/29/5/052001
Publication
Semiconductor Science and Technology
Status
Peer reviewed
ISSN
0268-1242Type
Journal article
Description
This work was financially supported by the German Ministry of Education and Research (BMBF) via the project QuaHL-Rep and by the State of Bavaria.Collections
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