InAs-based interband-cascade-lasers emitting around 7 μm with threshold current densities below 1 kA/cm2 at room temperature
Abstract
Interband cascade lasers (ICLs) grown on InAs substrates with threshold current densities below 1 kA/cm2 are presented. Two cascade designs with different lengths of the electron injector were investigated. Using a cascade design with 3 InAs quantum wells (QWs) in the electron injector, a device incorporating 22 stages in the active region exhibited a threshold current density of 940 A/cm2 at a record wavelength of 7 μm for ICLs operating in pulsed mode at room temperature. By investigating the influence of the number of stages on the device performance for a cascade design with 2 QWs in the electron injector, a further reduction of the threshold current density to 800 A/cm2 was achieved for a 30 stage device.
Citation
Dallner , M , Hau , F , Hoefling , S & Kamp , M 2015 , ' InAs-based interband-cascade-lasers emitting around 7 μ m with threshold current densities below 1 kA/cm 2 at room temperature ' , Applied Physics Letters , vol. 106 , no. 4 , 041108 . https://doi.org/10.1063/1.4907002
Publication
Applied Physics Letters
Status
Peer reviewed
ISSN
0003-6951Type
Journal article
Description
The authors acknowledge the financial support from the European Commission in the frame of the FP7 project “WideLase” (Grant No. 318798) Date of Acceptance: 19/01/2015Collections
Items in the St Andrews Research Repository are protected by copyright, with all rights reserved, unless otherwise indicated.