Temperature dependence of pulsed polariton lasing in a GaAs microcavity
Abstract
The second-order correlation function g((2))(tau = 0), input-output curves and pulse duration of the emission from a microcavity exciton-polariton system subsequent to picosecond-pulsed excitation are measured for different temperatures. At low temperatures a two-threshold behaviour emerges, which has been attributed to the onset of polariton lasing and conventional lasing at the first and the second threshold, respectively. We observe that polariton lasing is stable up to temperatures comparable with the exciton binding energy. At higher temperatures a single threshold displays the direct transition from thermal emission to photon lasing.
Citation
Tempel , J-S , Veit , F , Assmann , M , Kreilkamp , L E , Höfling , S , Kamp , M , Forchel , A & Bayer , M 2012 , ' Temperature dependence of pulsed polariton lasing in a GaAs microcavity ' , New Journal of Physics , vol. 14 , 083014 . https://doi.org/10.1088/1367-2630/14/8/083014
Publication
New Journal of Physics
Status
Peer reviewed
ISSN
1367-2630Type
Journal article
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