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Please use this identifier to cite or link to this item: http://hdl.handle.net/10023/3246
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Title: Quantum oscillations and high carrier mobility in the delafossite PdCoO2
Authors: Hicks, Clifford William
Gibbs, Alexandra Sarah
Mackenzie, Andrew
Takatsu, Hiroshi
Maeno, Yoshiteru
Yelland, Edward Alexander
Keywords: QC Physics
Issue Date: Sep-2012
Citation: Hicks , C W , Gibbs , A S , Mackenzie , A , Takatsu , H , Maeno , Y & Yelland , E A 2012 , ' Quantum oscillations and high carrier mobility in the delafossite PdCoO 2 ' Physical Review Letters , vol 109 , no. 11 , 116401 .
Abstract: We present de Haas-van Alphen and resistivity data on single crystals of the delafossite PdCoO2. At 295 K we measure an in-plane resistivity of 2.6 μΩcm, making PdCoO2 the most conductive oxide known. The low-temperature in-plane resistivity has an activated rather than the usual T5 temperature dependence, suggesting a gapping of effective scattering that is consistent with phonon drag. Below 10 K, the transport mean free path is ∼20 μm, approximately 105 lattice spacings and an astoundingly high value for flux-grown crystals. We discuss the origin of these properties in light of our data.
Version: Postprint
Status: Peer reviewed
URI: http://hdl.handle.net/10023/3246
http://arxiv.org/abs/1207.5402
DOI: http://dx.doi.org/10.1103/PhysRevLett.109.116401
ISSN: 0031-9007
Type: Journal article
Rights: This is an author version of this work. The published version (c) 2012 American Physical Society is available from http://link.aps.org/doi/10.1103/PhysRevLett.109.116401
Appears in Collections:Physics & Astronomy Research
University of St Andrews Research



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